矽源特ChipSourceTek-MX2301B是VDS=20V, ID=2.3A,RDS(ON)(Typ.)=89mΩ@VGS=-4.5V,RDS(ON)(Typ.)=110mΩ@VGS=-2.5V的P沟道增强型Mosfet。提供SOT-23封装。

矽源特ChipSourceTek-MX2301B Description:

矽源特ChipSourceTek-MX2301B是VDS=-20V, ID=-2.3A,RDS(ON)(Typ.)=89mΩ@VGS=-4.5V,RDS(ON)(Typ.)=110mΩ@VGS=-2.5V的P沟道增强型Mosfet。提供SOT-23封装。

The 矽源特ChipSourceTek-MX2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate. This device is suitable for use as a low switch or in PWM applications.

矽源特ChipSourceTek-MX2301B General Feature：

VDS=-20V, ID=-2.3A

RDS(ON)(Typ.)=89mΩ@VGS=-4.5V

RDS(ON)(Typ.)=110mΩ@VGS=-2.5V

High Power and current handing capability

Lead free product is acquired

Surface Mount Package

矽源特ChipSourceTek-MX2301B Application：

PWM applications

Load switch

Power management

矽源特ChipSourceTek-MX2301B Pinout：

矽源特ChipSourceTek-MX2301B Ordering Information：

Part Number/矽源特ChipSourceTek-MX2301B

StorageTemperature/-55°C to 150°C

Package/SOT-23

Devices Per Reel/3000

矽源特ChipSourceTek-MX2301B Test Circuit And Waveforms：