矽源特ChipSourceTek-PE2002M Description:
矽源特ChipSourceTek-PE2002M是VDS=18V, ID=42A,RDS(ON)<5.8mΩ@VGS=4.5V,RDS(ON)<6.0mΩ@VGS=3.8V,RDS(ON)<6.5mΩ@VGS=3.0V,RDS(ON)<8.0mΩ@VGS=2.5V的N沟道增强型电源Mosfet。提供DFN3x3-8L封装。
矽源特ChipSourceTek-The PE2002M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.
矽源特ChipSourceTek-PE2002M General Features：
VDS=18V, ID=42A
RDS(ON)<5.8mΩ@VGS=4.5V
RDS(ON)<6.0mΩ@VGS=3.8V
RDS(ON)<6.5mΩ@VGS=3.0V
RDS(ON)<8.0mΩ@VGS=2.5V
ESD Rating: 2000V HBM
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
矽源特ChipSourceTek-PE2002M Application:
PWM applications
Load switch
Power management
矽源特ChipSourceTek-PE2002M Switching Test Circuit:
矽源特ChipSourceTek-PE2002M Switching Waveform:
