矽源特ChipSourceTek-PE2305AT是SOT-23封装,16V, I5.5A,的P-Mosfet。提供SOT-23封装。
25天前The 矽源特ChipSourceTek-PE2305B uses advanced trench technology to provideexcellent RDS(ON) and low gate…
矽源特ChipSourceTek-PE2302DF是DFN2x2-6L封装。20V, 5A的N-Mosfet。
26天前The 矽源特ChipSourceTek-PE2302DF uses advanced trench technology toprovide excellent RDS(ON) and low gat…
矽源特ChipSourceTek-PE2002M是18V, 42AN-Mosfet。
27天前矽源特ChipSourceTek-The PE2002M uses advanced trench technology to provideexcellent RDS(ON) and low gate…
矽源特ChipSourceTek-PE60P50K是VDS=-60V, ID=-50A,RDS(ON)<25mΩ@VGS=-10V,RDS(ON)<32mΩ@VGS=-4.5V的P沟道增强型电源Mosfet。提供TO-252-2
1月前The 矽源特ChipSourceTek-PE60P50K uses deep trench technology to provideexcellent RDS(ON) and low gate ch…
矽源特ChipSourceTek-PE60P20K是VDS=-60V, ID=20A,RDS(ON)<80mΩ@VGS=-10V,RDS(ON)<115mΩ@VGS=-4.5V的P沟道增强型电源Mosfet。提供TO-252-2
1月前The 矽源特ChipSourceTek-PE60P20K uses deep trench technology to provideexcellent RDS(ON) and low gate cha…
矽源特ChipSourceTek-PE60P04是TO-252-2L封装,40V,70A的P-Mosfet
1月前The 矽源特ChipSourceTek-PE40P70K uses advanced trench technology toprovide excellent RDS(ON) and low gat…
矽源特ChipSourceTek-PE30P60KT是TO-252-2L封装,30V, 60A的P-Mosfet。
3月前The 矽源特ChipSourceTek-PE30P60KT uses advanced trench technology toprovide excellent RDS(ON) and low ga…